Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering
Authors:
- W. PaulWPW. Paul
- A.J. LewisALA.J. Lewis
- G.A.N. ConnellGCG.A.N. Connell
- T.D. MoustakasTMT.D. Moustakas
- 1 December 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (10) , 969-972
Abstract
No abstract availableKeywords
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