Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs
Authors:
- 19 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 53 (6) , 3379-3385
Abstract
Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs suggest that the single-event burnout (SEB) failure is determined by the device's avalanche characteristics and confirm SEB failure mechanism is due to the turn-on of parasitic bipolar transistor. The heavy ion beam is only acting as a trigger. Simulation results on various 600 V and 250 V radiation-hardened power MOSFETs from International Rectifier are compared to an extensive set of single event effect test results and prove quasi-stationary avalanche simulation is capable of evaluating and predicting SEB susceptibilityKeywords
This publication has 11 references indexed in Scilit:
- Evaluation of Worst-Case Test Conditions for SEE on Power DMOSFETs2006
- Physics-based simulation of single-event effectsIEEE Transactions on Device and Materials Reliability, 2005
- A device Simulation and model verification of single event transients in n/sup +/-p junctionsIEEE Transactions on Nuclear Science, 2005
- Laser Simulation of single event effects in pulse width ModulatorsIEEE Transactions on Nuclear Science, 2005
- Simulation study of single-event gate rupture using radiation-hardened stripe cell power MOSFET structuresIEEE Transactions on Nuclear Science, 2003
- Power MOSFETs hardened for single event effects (SEE) in space2002
- A review of the techniques used for modeling single-event effects in power MOSFETsIEEE Transactions on Nuclear Science, 1996
- Charged collected by diffusion from an ion track under mixed boundary conditionsIEEE Transactions on Nuclear Science, 1991
- Development of cosmic ray hardened power MOSFET'sIEEE Transactions on Nuclear Science, 1989
- Current Induced Avalanche in Epitaxial StructuresIEEE Transactions on Nuclear Science, 1985