Radiation damage in vitreous fused silica induced by MeV ion implantation
Authors:
- Shi ChengruSCShi Chengru
- Tan ManqiTMTan Manqi
- T.A. TombrelloTTT.A. Tombrello
- 1 August 1988
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 104 (1) , 85-94
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Ion implantation into fused quartz for integrated optical circuitsOptics Communications, 1976
- Observation and analysis of the primary 29Si hyperfine structure of the E′ center in non-crystalline SiO2Solid State Communications, 1974
- Oxide Charge Trapping Induced by Ion Implantation in SiO2IEEE Transactions on Nuclear Science, 1973
- Ion bombardment fabrication of optical waveguides using electron resist masksApplied Physics Letters, 1972
- Dependence of MOS Device Radiation-Sensitivity on Oxide ImpuritiesIEEE Transactions on Nuclear Science, 1972
- THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATIONApplied Physics Letters, 1971
- Optical Waveguides Formed by Proton Irradiation of Fused Silica*†Journal of the Optical Society of America, 1968
- Paramagnetic Spectra ofCenters in Crystalline QuartzPhysical Review B, 1963
- Paramagnetic Resonance of Lattice Defects in Irradiated QuartzJournal of Applied Physics, 1956