Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength
- 15 April 2011
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 109 (8) , 083710
Abstract
The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.Keywords
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