AN ELECTRON-MIRROR INFRARED IMAGE CONVERTER USING VITREOUS SELENIUM-BISMUTH PHOTOCONDUCTING LAYERS
Authors:
- 15 June 1969
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (12) , 390-392
Abstract
An electron‐mirror infrared image converter using a 4‐μ‐thick layer of 95 at. % of Se and 5 at. % of Bi as both mirror and target has been constructed. Preliminary measurements indicate that the device has a sensitivity of 0.13 μA per μW per cm2 at a wavelength of 9600 Å.Keywords
This publication has 1 reference indexed in Scilit:
- New Vitreous SemiconductorsJournal of Applied Physics, 1968