Multi‐State Memory in 2D Magnets via Thickness‐Engineered Growth

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Abstract
Two‐dimensional (2D) magnets offer substantial potential for high‐density spintronic memory due to their tunable magnetic states, yet a robust, scalable strategy for controlling domain configurations for 2D magnets remains elusive. Here, a selective non‐uniform nucleation strategy via chemical vapor deposition is proposed to achieve controlled, non‐homogeneous growth of room‐temperature ferromagnetic CrTe nanoflakes. This enables bottom‐up control of domain evolution by leveraging the strong correlation between the thickness profile and magnetization reversal. The stepwise magnetization reversal in multi‐thickness nanoflakes endows CrTe with multiple magnetic states. Utilizing such multi‐thickness CrTe nanoflake, a tunable multi‐state magnetoresistance is successfully realized in vertical spin valve devices. The controlled synthesis of multi‐thickness CrTe nanoflakes signifies a breakthrough in domain‐state control in 2D magnet, and establishes a robust material foundation for potential applications in multi‐state storage and spin encryption communication.
Funding Information
  • National Key Research and Development Program of China (2022YFA1204003)
  • National Key Research and Development Program of China (2022YFA1203902)
  • National Key Research and Development Program of China (2025YFA1411002)
  • National Natural Science Foundation of China (92263203)
  • National Natural Science Foundation of China (52501306)
  • National Natural Science Foundation of China (52402331)
  • China Postdoctoral Science Foundation (2024M750087)

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