Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget
Authors:
- Ting-Yun WangTWTing-Yun Wang
- Wei-Chung KaoWKWei-Chung Kao
- Yu-Tung YinYYYu-Tung Yin
- Jay ShiehJSJay Shieh
- Miin-Jang ChenMCMiin-Jang Chen
- 2 April 2022
- journal article
- research article
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 42 (10) , 4221-4226
Abstract
No abstract availableKeywords
Funding Information
- Taiwan Semiconductor Manufacturing Company
- Ministry of Science and Technology, Taiwan (109-2221-E-002-123-MY3)
- Ministry of Science and Technology, Taiwan (110-2218-E-002-042-MBK)
- Ministry of Science and Technology, Taiwan (110-2622-8-002-014)
- Ministry of Science and Technology, Taiwan (110-2218-E-002-031)
This publication has 31 references indexed in Scilit:
- Ferroelectricity in Simple Binary ZrO2 and HfO2Nano Letters, 2012
- Incipient Ferroelectricity in Al‐Doped HfO2 Thin FilmsAdvanced Functional Materials, 2012
- Metal Fabrication by Additive Manufacturing Using Laser and Electron Beam Melting TechnologiesJournal of Materials Science & Technology, 2012
- Ferroelectricity in yttrium-doped hafnium oxideJournal of Applied Physics, 2011
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011
- Mechanical evaluation of porous titanium (Ti6Al4V) structures with electron beam melting (EBM)Journal of the Mechanical Behavior of Biomedical Materials, 2010
- Characterization of titanium aluminide alloy components fabricated by additive manufacturing using electron beam meltingActa Materialia, 2010
- Crystal structure and band gap determination of HfO2 thin filmsJournal of Applied Physics, 2007
- Current status and challenges of ferroelectric memory devicesMicroelectronic Engineering, 2005
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979