Atomic Layer Deposition of Hafnium Silicate Gate Dielectric Films Using Hf[N(CH[sub 3])(C[sub 2]H[sub 5])][sub 4] and SiH[N(CH[sub 3])[sub 2]][sub 3] Precursors
Authors:
- Satoshi KamiyamaSKSatoshi Kamiyama
- Takayoshi MiuraTMTakayoshi Miura
- Yasuo NaraYNYasuo Nara
- Tsunetoshi ArikadoTATsunetoshi Arikado
- 1 January 2005
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 8 (8) , G215
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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