Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM
Authors:
- Jongmin ParkJPJongmin Park
- Tae-Hyeon KimTKTae-Hyeon Kim
- Osung KwonOKOsung Kwon
- Muhammad IsmailMIMuhammad Ismail
- Chandreswar MahataCMChandreswar Mahata
- Yoon KimYKYoon Kim
- Sangbum KimSKSangbum Kim
- Sungjun KimSKSungjun Kim
Top Cited Papers
- 14 October 2022
- journal article
- research article
- Published by Elsevier in Nano Energy
- Vol. 104
Abstract
No abstract availableKeywords
Funding Information
- NRF
- Ministry of Science, ICT and Future Planning (2020M3F3A2A01082593, 2021R1C1C1004422)
- National Research Foundation of Korea
This publication has 44 references indexed in Scilit:
- Study of Multi-level Characteristics for 3D Vertical Resistive Switching MemoryScientific Reports, 2014
- Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation SystemsACS Nano, 2014
- A Review on Conduction Mechanisms in Dielectric FilmsAdvances in Materials Science and Engineering, 2014
- Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low CurrentIEEE Electron Device Letters, 2013
- HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point ArchitectureACS Nano, 2013
- Oxygen vacancy estimation of high k metal gate using thermal dynamic modelApplied Physics Letters, 2010
- Current conduction mechanisms in Pr2O3/oxynitride laminated gate dielectricsJournal of Applied Physics, 2009
- Resistive switching in transition metal oxidesMaterials Today, 2008
- XPS study for reactively sputtered titanium nitride thin films deposited under different substrate biasPhysica B: Condensed Matter, 2004
- The Control of Short-Term MemoryScientific American, 1971