Chemically gated electronic structure of a superconducting doped topological insulator system
Open Access
- 17 July 2013
- conference paper
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 449 (1) , 012037
Abstract
Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.Keywords
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