Interplay between morphology and thickness of a SiN interlayer for enhanced thermal transport across the GaN/diamond interface
- 16 January 2026
- journal article
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 25 (1)
Abstract
No abstract availableFunding Information
- National Key Research and Development Program of China (2023YFA1407001)
- National Natural Science Foundation of China (12504013)
- Jiangxi Provincial Department of Science and Technology (BK20231279)
- Basic Research Program of Jiangsu Province (BK20250647)
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