Combined Ruthenium Lead Surface Treatment of Gallium Arsenide Photoanodes

Authors:

Abstract
An increase in the solar‐to‐electrical conversion efficiency beyond that due to chemisorption of ruthenium results from subsequent adsorption of lead from alkaline solutions on both single crystal and polycrystalline n‐GaAs photoanodes. An efficiency of 7.8% is reached with thin film, chemically vapor deposited polycrystalline GaAs in the cell n‐GaAs/0.8 M K2Se0.1 M K2Se21 M KOH/C.

This publication has 7 references indexed in Scilit: