Common-anode LED on a Si substrate for beyond 15 Gbit/s underwater visible light communication
Authors:
- Yingjun ZhouYZYingjun Zhou
- Xin ZhuXZXin Zhu
- Fangchen HuFHFangchen Hu
- Jianyang ShiJSJianyang Shi
- Fumin WangFWFumin Wang
- Peng ZouPZPeng Zou
- Junlin LiuJLJunlin Liu
- Fengyi JiangFJFengyi Jiang
- Nan ChiNCNan Chi
- 14 August 2019
- journal article
- research article
- Published by Optica Publishing Group in Photonics Research
- Vol. 7 (9) , 1019-1029
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (NSFC) (61571133)
- National Key Research and Development Program of China (2016YFB0400600)
This publication has 28 references indexed in Scilit:
- Replacing the Soft-Decision FEC Limit Paradigm in the Design of Optical Communication SystemsJournal of Lightwave Technology, 2015
- High optical efficiency GaN based blue LED on silicon substrateSCIENTIA SINICA Physica, Mechanica & Astronomica, 2015
- Visible light communications: demand factors, benefits and opportunities [Guest Editorial]IEEE Wireless Communications, 2015
- Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodesJournal of Applied Physics, 2014
- Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrateApplied Physics Letters, 2011
- Laser lift-off technique and the re-utilization of GaN-based LED films grown on sapphire substrateOptoelectronics Letters, 2008
- Different properties of GaN-based LED grown on Si(111) and transferred onto new substrateScience China Technological Sciences, 2006
- Growth and characterization of InGaN blue LED structure on Si(111) by MOCVDJournal of Crystal Growth, 2005
- GaN-based optoelectronics on silicon substratesMaterials Science and Engineering: B, 2002
- III–nitrides: Growth, characterization, and propertiesJournal of Applied Physics, 2000