Strain Effect Enhanced Ultrasensitive MoS2 Nanoscroll Avalanche Photodetector

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Abstract
2D materials and their derived quasi one-dimensional structure bring incredible possibilities for the field of photoelectric detection due to the intrinsic optical and electrical properties. However, the photo-generated carriers in atomically thin media are poor due to the low optical absorption, which extremely limits the performance. Here, in the MoS2 nanoscrolls photodetector, we meticulously investigated the avalanche multiplication effect. The results show that by employing the nanoscrolls structure, the required threshold electrical field to trigger avalanche multiplication is significantly lowered compared with MoS2 flake due to the modulation of energy band and intervalley scattering through the strain effect. Consequently, the avalanche multiplication could efficiently enhance the photoresponsivity exceeding 10^4 A/W. Furthermore, enhanced avalanche multiplication could be generalized to other TMDCs through theoretical prediction. The results are not only significant for the understanding of intrinsic nature in 2D materials but also exhibit meaningful advance in high performance and low-power consumption photodetection.
Funding Information
  • Ministry of Education of the People's Republic of China (PXM2019_014204_500032)
  • Natural Science Foundation of Beijing Municipality (4162016)
  • National Natural Science Foundation of China (61922005, U1930105)
  • China Academy of Engineering Physics (U1930105)
  • China Electronics Technology Group Corporation (6141B08110104)

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