Characterization of Al-AlOx and Sn-SnOx cermet films deposited by reactive evaporation
Authors:
- Hülya DemiryontHDHülya Demiryont
- Nilgün TezeyNTNilgün Tezey
- 1 March 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 101 (4) , 345-356
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Effect of absorbed water on an indium oxide insulator (BeO⋅SiO2)-p-silicon solar cellJournal of Applied Physics, 1982
- Highly transparent conductive films of thermally evaporated In2O3Journal of Electronic Materials, 1981
- Anodization rate and augmentation factor of anodic aluminum oxide filmsJournal of Applied Physics, 1979
- Effects of heat treatment on the optical and electrical properties of indium–tin oxide filmsJournal of Applied Physics, 1978
- Thickness dependence of the dielectric constant and resistance of Al2O3 filmsJournal of Applied Physics, 1977
- Characterization of transparent conductive thin films of indium oxideJournal of Vacuum Science and Technology, 1975
- Thin film circuits—Part I. The uses of photomechanical processes in the manufacture of micro-miniature circuitsMicroelectronics Reliability, 1964
- The Formation of Metal Oxide Films Using Gaseous and Solid ElectrolytesJournal of the Electrochemical Society, 1963
- Electrical Properties of Evaporated Aluminum Oxide FilmsJournal of the Electrochemical Society, 1962
- Thin-film capacitors using tantalum oxide dielectrics prepared by reactive sputteringSolid-State Electronics, 1961