Fault detection for SiC-Mosfet based on the behavior of gate signal
- 1 September 2015
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 71-76
Abstract
We present the design and simulation of a fault detection circuit applied to a Silicon Carbide Mosfet (SiC-Mosfet), fault detection is done by examining the behavior of gate signal. The most important aspects that have been made and are reported specifically: early detection, since the evaluation is done during the transient of turn-on, allowing early detection in the case of short-circuit, failure detection times small as which prevents to the spread to full system. To validate the system, this was designed and applied to failure detection to Boost-Converter with SiC-Mosfet, the simulation results to validate the robustness and reliability of the electronic system designed.Keywords
This publication has 3 references indexed in Scilit:
- Study of a Novel Electronics Circuit for Detecting Faults in the IGBTIEEE Latin America Transactions, 2014
- A Failure-Detection Strategy for IGBT Based on Gate-Voltage Behavior Applied to a Motor Drive SystemIEEE Transactions on Industrial Electronics, 2010
- Fault-tolerant control in variable speed drives: a surveyIET Electric Power Applications, 2008