Effect of dimensional confinement on the memristive properties of the perovskite-inspired novel CuxAgBiI4+x halide compound
Authors:
- Awais KhalidAKAwais Khalid
- Satam AlotibiSASatam Alotibi
- Pervaiz AhmadPervaiz Ahmad
- Mousa M. HossinMHMousa M. Hossin
- Aisha Nawaf AlbalawiAAAisha Nawaf Albalawi
- Bader Al-AnziBABader Al-Anzi
- 14 July 2024
- journal article
- research article
- Published by Elsevier in Chemical Engineering Journal
- Vol. 496
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Lead‐Free Halide Perovskite Materials and Optoelectronic Devices: Progress and ProspectiveAdvanced Functional Materials, 2023
- Solution Processable Direct Bandgap Copper‐Silver‐Bismuth Iodide Photovoltaics: Compositional Control of Dimensionality and Optoelectronic PropertiesAdvanced Energy Materials, 2022
- Enhanced Memristive Performance of Double Perovskite Cs2AgBiBr6‐xClx Devices by Chloride DopingChempluschem, 2021
- Lead‐Free Double Perovskite Cs2AgBiBr6: Fundamentals, Applications, and PerspectivesAdvanced Functional Materials, 2021
- Diffusive and Drift Halide Perovskite Memristive Barristors as Nociceptive and Synaptic Emulators for Neuromorphic ComputingAdvanced Materials, 2021
- Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic ElectronicsAdvanced Materials, 2020
- Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and ApplicationsAdvanced Materials Technologies, 2020
- Progress of Lead‐Free Halide Double PerovskitesAdvanced Energy Materials, 2019
- Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive SwitchingAdvanced Functional Materials, 2017
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesAdvanced Materials, 2009