Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

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Abstract
In this study, Wadsley B phase vanadium oxide (VO2(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO2(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of −4.77% K–1 at 40 °C, a peak specific detectivity of 6.02 × 109 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature–photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO2(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.
Funding Information
  • Changjiang Scholar Program, Ministry of Education
  • Guangzhou Municipal Science and Technology Bureau (202002030142)
  • National Natural Science Foundation of China (61934004, 62174072, 91963205)
  • Guangdong Basic and Applied Basic Research Foundation (2017B09090701, 2019B151502049, 2020A1515011329, 2020A1515111192)

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