Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications

This publication has 27 references indexed in Scilit:

• Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs
  Solid-State Electronics, 2012
• High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators
  IEEE Electron Device Letters, 2011
• Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
  Semiconductors, 2011
• High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
  IEEE Electron Device Letters, 2010
• Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT
  Solid-State Electronics, 2009
• An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications
  Microelectronics Journal, 2007
• Polarization dependent analysis of AlGaN/GaN HEMT for high power applications
  Solid-State Electronics, 2007
• 30-W/mm GaN HEMTs by Field Plate Optimization
  IEEE Electron Device Letters, 2004
• AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates
  Solid-State Electronics, 2002
• An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs
  Solid-State Electronics, 2002