Secondary electron emission for layered structures
Authors:
- 1 May 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 20 (3) , 950-952
Abstract
Semiempirical theory for secondary electron emission is extended to cover the layered structure. Secondary electron emission for the two-layered structure, i.e., a thin film on a substrate, is calculated and compared with the experiment. Good agreement between the two indicates the usefulness of this theory for the layered structure.Keywords
This publication has 12 references indexed in Scilit:
- Double- to single-hump shape change of secondary electron emission curve for thermal SiO2 layersApplied Physics Letters, 2001
- Undergate-type Triode Carbon Nanotube Field Emission Display with a Microchannel PlateJapanese Journal of Applied Physics, 2001
- Microchannel plate for high-efficiency field emission displayApplied Physics Letters, 2000
- Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systemsJournal of Applied Physics, 1997
- Description of the influence of charging on the measurement of the secondary electron yield of MgOApplied Surface Science, 1997
- Secondary electron yield of SiO2 and Si3N4 thin films for continuous dynode electron multipliersApplied Surface Science, 1991
- Origin of secondary-electron-emission yield-curve parametersJournal of Applied Physics, 1975
- Secondary Electron Emission1958
- Dissipation of Energy by 2.5–10 kev Electrons in Al2O3Journal of Applied Physics, 1957
- Penetration of Electrons in Aluminum Oxide FilmsPhysical Review B, 1956