Point-defect interactions when annealing diamonds implanted at low temperatures

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Abstract
In this paper, the point-defect interactions which occur during annealing, when doping diamond by means of the cold-implantation–rapid-annealing technique [Phys. Rev. B 38, 5576 (1988)], are modeled using reaction-rate theory. The equations predict that the magnitudes of the activation energies, controlling dopant–interstitial-vacancy combination and dopant-interstitial diffusion, relative to the same energies applicable to the self-interstitials, determine the end result which will be obtained for a chosen implantation-annealing sequence. It is also possible to explain why an increase in the annealing temperature can lead to a decrease in dopant activation, as had been observed experimentally (and reported elsewhere) for boron. Reasonable values for the self-interstitial activation energies are found when applying this model to previously published results.

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