Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
Authors:
- 20 May 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 46 (6) , 1873-1878
Abstract
Spin-transfer torque random access memory (STT-RAM) is a potentially revolutionary universal memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM, the non-volatility of Flash, and essentially unlimited endurance. In order to realize a small cell size, high speed and achieve a fully functional STT-RAM chip, the MgO-barrier magnetic tunnel junctions (MTJ) used as the core storage and readout element must meet a set of performance requirements on switching current density, voltage, magneto-resistance ratio (MR), resistance-area product (RA), thermal stability factor (¿) , switching current distribution, read resistance distribution and reliability. In this paper, we report the progress of our work on device design, material improvement, wafer processing, integration with CMOS, and testing for a demonstration STT-RAM test chip, and projections based on modeling of the future characteristics of STT-RAM.Keywords
This publication has 16 references indexed in Scilit:
- Magnetoresistive Random Access Memory: The Path to Competitiveness and ScalabilityProceedings of the IEEE, 2008
- Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM2008
- Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip CapacityIEEE Transactions on Magnetics, 2006
- Spin transfer in nanomagnetic devices with perpendicular anisotropyApplied Physics Letters, 2006
- Spin-transfer switching current distribution and reduction in magnetic tunneling junction-based structuresIEEE Transactions on Magnetics, 2005
- Magnetoresistive random access memory operation error by thermally activated reversal (invited)Journal of Applied Physics, 2005
- Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctionsApplied Physics Letters, 2004
- Spin-polarized current induced switching in Co/Cu/Co pillarsApplied Physics Letters, 2001
- Spin-current interaction with a monodomain magnetic body: A model studyPhysical Review B, 2000
- Emission of spin waves by a magnetic multilayer traversed by a currentPhysical Review B, 1996