Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
Authors:
- J.W. MayerJMJ.W. Mayer
- B.Y. TsaurBTB.Y. Tsaur
- S.S. LauSLS.S. Lau
- L-S. HungLHL-S. Hung
- 1 April 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 1-13
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Distortion of depth profiles during sputteringNuclear Instruments and Methods, 1980
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Ion-beam-induced intermixing of surface layersThin Solid Films, 1979
- Formation of Si-enriched metastable compounds in the Pt-Si system using ion bombardment and post annealingPhysics Letters A, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979
- Ion-induced silicide formation in niobium thin filmsRadiation Effects, 1979
- Solute segregation and precipitation under heavy-ion bombardmentJournal of Nuclear Materials, 1978
- The effect of point defect fluxes on radiation-enhanced diffusion in nickelRadiation Effects, 1977
- Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layersRadiation Effects, 1974
- Metastable evaporated thin films of CuAg and CoAu alloys—I occurrence and morphology of phasesActa Metallurgica, 1967