Transparent magnetic semiconductors based on ZnO
Authors:
- H SaekiHSH Saeki
- H MatsuiHMH Matsui
- T KawaiTKT Kawai
- H TabataHTH Tabata
- 20 November 2004
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 16 (48) , S5533-S5540
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Role of Ga for Co-doping of Ga with N in ZnO FilmsJapanese Journal of Applied Physics, 2003
- Influence of Codoping with Ga on the Electrical and Optical Properties of N-Doped ZnO FilmsJournal of the Electrochemical Society, 2003
- Electronic structure and ferromagnetism of transition-metal-impurity-doped zinc oxidePhysica B: Condensed Matter, 2001
- Magnetic and electric properties of vanadium doped ZnO filmsSolid State Communications, 2001
- Fabrication of the low-resistive p-type ZnO by codoping methodPhysica B: Condensed Matter, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Electrical spin injection in a ferromagnetic semiconductor heterostructureNature, 1999
- Coexistence of ferroelectricity and ferromagnetism in BiFeO3–BaTiO3 thin films at room temperatureApplied Physics Letters, 1999
- Magnetic circular dichroism of zinc-blende-phase MnTePhysical Review B, 1992
- Critical behavior of the electrical resistivity in magnetic systemsPhysical Review B, 1976