Modeling and simulation of GaN based QW LED for UV emission
Authors:
- Shameem AhmadSAShameem Ahmad
- M.A. RaushanMRM.A. Raushan
- Shalendra KumarSKShalendra Kumar
- S. DalelaS. Dalela
- M.J. SiddiquiMSM.J. Siddiqui
- P.A. AlviP.A. Alvi
Abstract
No abstract availableKeywords
Funding Information
- Department of Science and Technology, Ministry of Science and Technology, India
- University Grants Commission
This publication has 18 references indexed in Scilit:
- Recent Progress in AlGaN‐Based Deep‐UV LEDsElectronics and Communications in Japan, 2015
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displaysActa Materialia, 2013
- Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfectionWater Research, 2011
- Electronic and optical properties of InGaN quantum dot based light emitters for solid state lightingJournal of Applied Physics, 2009
- A proposal for enhancement of optical nonlinearity in GaN/AlGaN centered defect quantum box (CDQB) nanocrystalSolid-State Electronics, 2008
- Development of a new water sterilization device with a 365 nm UV-LEDMedical & Biological Engineering & Computing, 2007
- Interrelation of structural and electronic properties in quantum dots using an eight-band modelPhysical Review B, 2006
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Determination of Quasi Fermi-Level Separation of Semiconductor Lasers from Amplified Spontaneous EmissionChinese Physics Letters, 2004
- Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaNPhysical Review B, 1997