Oxygen partial pressure effect on structural and electrical behavior of pulsed laser deposited Zn0.98Co0.02O thin films
- 24 May 2012
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 135 (1) , 174-180
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Identifying local dopant structures and their impact on the magnetic properties of spintronic materialsPhysical Review B, 2011
- Oxygen pressure and measurement temperature dependence of defects related bands in zinc oxide filmsVacuum, 2010
- Effect of oxygen partial pressure on the Fermi level of ZnO1−x films fabricated by pulsed laser depositionApplied Physics Letters, 2010
- Evidence for high-ferromagnetism ingranular films mediated by native point defectsPhysical Review B, 2009
- Role of defects in tailoring structural, electrical and optical properties of ZnOProgress in Materials Science, 2009
- Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO filmsMaterials Science and Engineering: R: Reports, 2008
- A comprehensive review of ZnO materials and devicesJournal of Applied Physics, 2005
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- First-principles study of native point defects in ZnOPhysical Review B, 2000
- Lattice diffusion, grain boundary diffusion and defect structure of ZnoJournal of Physics and Chemistry of Solids, 1994