Abstract
In this letter, a novel and effective method for non-Foster active absorber with ultralow profile and wide absorption band is proposed. The three-layer absorber consists of a square loop frequency selective surface array printed on the FR-4 dielectric substrate, a non-Foster matching layer, and a backed metal plane.Equivalent circuit model for the active absorber is proposed and analyzed, providing great insight into the effect of non-Foster matching layer on breaking the Rozanov limit effectively. A 1×10 absorber absorbing structure sample is fabricated.It is shown by measurement that the absorber has a fractional bandwidth of 36.0%, with a total thickness of only 0.008 λL (wavelength at the lowest absorption frequency). The simulation and experimental results are in good agreement in the operating band, which verifies the accuracy of the design method.
Funding Information
  • National Natural Science Foundation of China (61731005)

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