Etching and inhibition of the {111} surfaces of the III–V intermetallic compounds: InSb
Authors:
- 1 July 1960
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 14, 169-174
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- X-Ray Method for the Differentiation of {111} Surfaces in AIIIBV Semiconducting CompoundsJournal of Applied Physics, 1959
- Polarity of Gallium Arsenide Single CrystalsJournal of Applied Physics, 1959
- Dislocations and Selective Etch Pits in InSbJournal of Applied Physics, 1958
- Dislocation Etch Pit Formation in Lithium FluorideJournal of Applied Physics, 1958
- Etching of Single Crystal Germanium SpheresJournal of Applied Physics, 1954
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951