Dispersion of optical anisotropy in nanostructurized silicon films
- 1 January 2004
- journal article
- Published by Pleiades Publishing Ltd in Crystallography Reports
- Vol. 49 (1) , 143-148
Abstract
Optical characteristics of (110) oriented porous silicon films obtained by electrochemical etching are studied. Dispersion of refractive indices, dichoroism in the visible range of the spectrum, depolarization factor, and porosity of silicon films are measured. It is shown that the results obtained may be described based on the generalized Bruggeman model. Possible causes of the established discrepancies between the experimental data and the model are discussed.Keywords
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