Simulation of power heterojunction bipolar transistors on gallium arsenide
Authors:
- 1 June 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (6) , 1264-1269
Abstract
We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed as functions of the lattice temperature and in the case of semiconductor alloys, of the material composition.Keywords
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