Giant electric fields in unstrained GaN single quantum wells
- 14 June 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (25) , 3827-3829
Abstract
We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm. These fields, resulting from the interplay of the piezoelectric and spontaneous polarizations in the well and barrier layers due to Fermi level alignment, induce large redshifts of the photoluminescence energy position and dramatically increase the carrier lifetime as the quantum well thickness increases.Keywords
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