Novel room temperature multiferroics for random access memory elements

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Abstract
We have fabricated a variety of PZT-PFW (PbZr 0.52 Ti 0.48 O 3 ) 1_x (PbFe 2/3 W 1/3 O 3 )x [PZTFWx; 0.2 <; × <; 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition [polycrystalline] and pulsed laser deposition [epitaxial] onto Pt/Ti/SiO 2 /Si(100) and SrTiO 3 /Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via electrostriction and magnetostriction. Application of modest magnetic field strength (μoH <; 1.0 T) destabilizes the long-range ferroelectric ordering and switches the polarization from approximately 22 μC/cm 2 (0.22 C/m 2 ) to zero (relaxor state). This offers the possibility of three-state logic (+P, 0, -P) and magnetically switched polarizations. Because the switching is of large magnitude (unlike the very small nanocoulomb per centimeter squared values in terbium manganites) and at room-temperature, commercial devices should be possible.

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