Origin of the Excess Capacitance at Intimate Schottky Contacts
Authors:
- 4 January 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (1) , 53-56
Abstract
We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e., intimate Schottky contacts. Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as previously thought. Minority-carrier injection depends sensitively on the properties of the Ohmic back-contact.Keywords
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