Enhancement of P3HT organic photodiodes by the addition of a GaSe 9 alloy thin layer
- 12 July 2017
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 32 (8) , 085008
Abstract
We report on gallium–selenium alloy (GaSe 9 ) thin films simultaneously functioning as both blocking layer and active layer on poly(3-hexylthiophene-2, 5-diyl) (P3HT)-based organic photodiodes in order to enhance device performance. In addition to improved transport of the photogenerated charge carriers, GaSe 9 films also contribute to light absorption on a different wavelength interval than that of P3HT. Three different devices are compared: ITO/GaSe 9 /Al, ITO/P3HT/Al and ITO/P3HT/GaSe 9 /Al, with the last one presenting a lower dark current density (0.90 μ A cm −2 ), higher ON/OFF current ratio (61) and fastest response under AM 1.5 light irradiance. The observed responsivity is 7.3 mA W −1 and is almost linearly dependent on irradiance in the range 0.6–60 W m −2 . A maximum external quantum efficiency of 135% and specific detectivity of 16.7 × 10 11 Jones at 390 nm incident light wavelength are obtained.Keywords
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