Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination
Authors:
- Song HanSHSong Han
- Wu JinWJWu Jin
- Daihua ZhangDZDaihua Zhang
- Tao TangTTTao Tang
- Chao LiCLChao Li
- Xiaolei LiuXLXiaolei Liu
- Zuqin LiuZLZuqin Liu
- Bo LeiBLBo Lei
- Chongwu ZhouCZChongwu Zhou
- 1 May 2004
- journal article
- research article
- Published by Elsevier in Chemical Physics Letters
- Vol. 389 (1-3) , 176-180
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Laser Ablation Synthesis and Electron Transport Studies of Tin Oxide NanowiresAdvanced Materials, 2003
- Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic NanodevicesNano Letters, 2003
- Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition methodJournal of Materials Research, 2003
- Single gallium nitride nanowire lasersNature Materials, 2002
- Gallium Nitride Nanowire NanodevicesNano Letters, 2002
- Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide NanowiresScience, 2001
- Formation of GaN nanorods by a sublimation methodJournal of Crystal Growth, 2000
- Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noiseApplied Physics Letters, 1998
- Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined ReactionScience, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996