Lateral coherence properties of broad-area semiconductor quantum well lasers
Authors:
- 1 July 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (1) , 66-68
Abstract
The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.Keywords
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