Images of Edge Current inQuantum Wells
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- 11 July 2014
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 113 (2) , 026804
Abstract
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than ${e}^{2}/h$ per edge. We imaged edge currents in $\mathrm{InAs}/\mathrm{GaSb}$ quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/{e}^{2}$, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.
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