Giant Isotope Effect on the Excited-State Lifetime and Emission Efficiency of the Silicon T Center
- 4 February 2026
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 136 (5) , 053602
Abstract
Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T center, a telecommunications-band emitter in silicon, and find a strong isotope dependence of its excited-state lifetime. In particular, the lifetime of the deuterium T center is over five times longer than the common protium variant. We measure an isotope-dependent shift of the local vibrational carbon-hydrogen stretch mode energy and show through explicit first-principles calculations that the dramatic lifetime difference is consistent with strong suppression of nonradiative decay due to the reduced energy of this mode for deuterium T centers. Our results imply that the deuterium T center approaches unit quantum efficiency, enabling more efficient single-photon sources and quantum memories and improved readout of the T center electron spin.Keywords
All Related Versions
Funding Information
- Natural Sciences and Engineering Research Council of Canada
- Ministère de la Défense Nationale
- Innovation for Defence Excellence and Security
- Canada Research Chairs
- Canada Foundation for Innovation
- British Columbia Knowledge Development Fund
- Canadian Institute for Advanced Research
- Office of Naval Research
- U.S. Naval Research Laboratory
- New Frontiers in Research Fund
This publication has 51 references indexed in Scilit:
- First‐Principles Investigation of the T‐ and M‐Centers in Silicon Using Meta‐GGA FunctionalsAdvanced Theory and Simulations, 2025
- Cavity-coupled telecom atomic source in siliconNature Communications, 2024
- Nonrad: Computing nonradiative capture coefficients from first principlesComputer Physics Communications, 2021
- Author Correction: Quantum nanophotonics with group IV defects in diamondNature Communications, 2020
- Solid-state single-photon emittersNature Photonics, 2016
- Isolated electron spins in silicon carbide with millisecond coherence timesNature Materials, 2014
- Ultralong spin coherence time in isotopically engineered diamondNature Materials, 2009
- Enhancement of OLED Efficiencies and High-Voltage Stabilities of Light-Emitting Materials by DeuterationThe Journal of Physical Chemistry C, 2007
- Photoluminescence characterisation of hydrogen-related centres in siliconMaterials Science and Engineering: B, 1999
- Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis setComputational Materials Science, 1996