Broadband Visible−Near Infrared Two‐Dimensional WSe2/In2Se3 Photodetector for Underwater Optical Communications

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Abstract
P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In2Se3 (direct bandgap) on a p‐type ultra‐thin WSe2 nanosheet. The vdWs stacked photodetector with an improved type‐II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode‐like behavior. This behavior is further confirmed by the high‐resolution scanning photocurrent mapping. As a result, the as‐fabricated device exhibits a short response time (−1 under 520 nm laser illumination. Accordingly, an underwater optical communication system based on the WSe2/α‐In2Se3 p‐n heterojunction photodetector is demonstrated, which is promising for next‐generation high‐performance and low‐power detection applications.
Funding Information
  • National Natural Science Foundation of China (61974014)
  • Higher Education Discipline Innovation Project (B20030)
  • Fundamental Research Funds for the Central Universities (ZYGX2019Z018)

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