Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature

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Abstract
Energy‐efficient magnetization switching by current‐induced spin‐orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin‐orbit coupling, topological insulators (TI) with spin‐momentum locking are expected to be promising candidates for generating a significant spin‐orbit torque compared to the heavy metal system. To achieve high charge‐to‐spin conversion efficiency, it is imperative to incorporate a ferromagnetic layer with low conductivity. In this study, a high spin‐torque efficiency (βL = 12.9 × 10−6mT A−1cm2) and spin Hall conductivity () are reported as being observed at 80 K in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer. The magnetization switching induced by spin‐orbit torque in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer is observed. It is demonstrated that the hump‐like feature in the anomalous Hall effect (AHE) resistance curve can be attributed to the presence of two magnetic phases in compressively strained chromium telluride grown on a c‐Al2O3 substrate using molecular beam epitaxy (MBE). The work holds the promise of propelling efficiency advancements in spintronic applications that leverage the unique properties of topological insulators.
Funding Information
  • National Natural Science Foundation of China (12074056, 52021001)
  • National Key Research and Development Program of China (2021YFA0718800, 2024YFA1408503)

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