p-Type Sb2Te3and n-Type Bi2Te3Films for Thermoelectric Modules Deposited by Thermally Assisted Sputtering Method
Authors:
- Mizue MizoshiriMMMizue Mizoshiri
- Masashi MikamiMMMasashi Mikami
- Kimihiro OzakiKOKimihiro Ozaki
- 1 June 2013
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 52 (6S) , 06GL07
Abstract
We developed a thermally assisted sputtering method (TASM) based on direct current magnetron sputtering to increase the rates of deposition of Sb2Te3and Bi2Te3films. The sputtering target was heated with the thermal energy of Ar plasma without any additional heating systems. The stoichiometric Sb2Te3(p-type) and Bi2Te3(n-type) films were obtained by TASM. The maximum deposition rate of the films was approximately 1.6 µm/min, which is large for a sputtering method. The differences in the composition ratio between the sputtering target and the deposited films were as small as 3.6 (p-type) and 1.5% (n-type). TASM was applied to the fabrication of a flexible thermoelectric film module. The generation properties of the film module coincided with the values that were estimated on the basis of the thermoelectric properties of films deposited on a SiO2glass substrate. These results indicate that TASM is useful for fabricating thermoelectric film modules.Keywords
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