High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation
Authors:
- 22 December 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (1) , 5-7
Abstract
Long and short buried-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm2/ V middots. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 muA/mum at Vg - Vt = 1.6 V and peak transconductance of 715 muS/mum. In addition, the virtual source velocity extracted from the short-channel devices is 1.4-1.7 times higher than that of Si MOSFETs. These results indicate that the high-performance In0.7Ga0.3 As-channel MOSFETs passivated by an alpha -Si layer are promising candidates for advanced post-Si CMOS applications.Keywords
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