Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
Authors:
- Tso-Min ChouTCTso-Min Chou
- Jiehping SihJSJiehping Sih
- J.B. KirkJKJ.B. Kirk
- A. MantleAMA. Mantle
- J.K. ButlerJBJ.K. Butler
- D. BourDBD. Bour
- G.A. EvansGEG.A. Evans
- 1 January 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 7 (2) , 340-349
Abstract
A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-/spl mu/m lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25/spl deg/C, with a slope efficiency of 0.43 W/A, at 77 K or greater characteristic temperature, a 38/spl deg/ perpendicular far-field beam divergence, and will operate at temperatures in excess of 100/spl deg/C.Keywords
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