Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments
Authors:
- 28 June 2017
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 32 (7) , 075006
Abstract
In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO 2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on–off ratio (5.2 × 10 6 ) and a low off-current (1.2 × 10 −12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.Keywords
Funding Information
- National Research Foundation of Korea (MSIP/2017R1A2A2A14001213)
This publication has 41 references indexed in Scilit:
- Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectricApplied Physics Letters, 2016
- Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor propertiesCeramics International, 2016
- Recent Developments in p‐Type Oxide Semiconductor Materials and DevicesAdvanced Materials, 2016
- Oxide Semiconductor Thin‐Film Transistors: A Review of Recent AdvancesAdvanced Materials, 2012
- Irregular Electrical Conduction Types in Tin Oxide Thin Films Induced by Nanoscale Phase SeparationJournal of the American Ceramic Society, 2011
- Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealingApplied Physics Letters, 2010
- Thin-film transistors based on p-type Cu2O thin films produced at room temperatureApplied Physics Letters, 2010
- Phase and Optical Characterizations of Annealed SnO Thin Films and Their p-Type TFT ApplicationJournal of the Electrochemical Society, 2010
- p -channel thin-film transistor using p-type oxide semiconductor, SnOApplied Physics Letters, 2008
- ZnO devices: Photodiodes and p-type field-effect transistorsApplied Physics Letters, 2005