Resistance of Elastically Deformed Shallow p-n Junctions
Author:
- 1 August 1962
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (8) , 2479-2480
Abstract
Anisotropic elastic stress was applied to semiconductor surfaces parallel to the plane of shallow p‐n junctions. The resistance of diffused and alloyed junctions was found to be highly stress‐sensitive under both forward and reverse bias. Reversible resistance decreases under stress by factors of more than 103 were observed.Keywords
This publication has 6 references indexed in Scilit:
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