Ag-N dual acceptor doping into ZnO has been proposed to realize p-ZnO thin film of different concentrations (1, 2 and 4 at.%) by spray pyrolysis at 623 K and then 4 at.% films annealed at 673 K and 723 K for 1 hr. X-ray diffraction studies reveal that all the films are preferentially oriented along (002) plane. Energy dispersive spectroscopy (EDS) confirms the presence of Ag and N in 2 at.% ZnO:(Ag, N) film. Hall measurement shows that 4 at.% ZnO:(Ag, N) film achieved minimum resistivity with high hole concentration. The p-type conductivity of the ZnO:(Ag, N) films is retained even after 180 days. Photoluminescence (PL) spectra of ZnO:(Ag, N) films show low density of native defects.