Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors
Authors:
- Shao-Yu ChuSCShao-Yu Chu
- Tsung-Han YehTYTsung-Han Yeh
- Ching-Ting LeeChing-Ting Lee
- Hsin-Ying LeeHsin-Ying Lee
- 17 January 2022
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 142
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Science and Technology of the People's Republic of China
- Taiwan Ministry of Science and Technology (MOST-108-2221-E-006-196-MY3, MOST-108-2221-E-006-215-MY3, MOST-110-2218-E-006-025-MBK)
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