Paramagnetic resonance in GaN-based single quantum wells
Authors:
- 14 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (15) , 2019-2021
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Spin-Dependent Transport in SiC and III-V Semiconductor DevicesMaterials Science Forum, 1995
- Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based HeterostructuresMaterials Science Forum, 1995
- Nonlinear excitation of capillary waves by the Marangoni motion induced with a modulated laser beamPhysical Review B, 1995
- Deep level defects in n-type GaNApplied Physics Letters, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Iron Acceptors in Gallium Nitride (GaN)Materials Science Forum, 1993
- Interaction of a relaxing system with a dynamical environmentPhysical Review E, 1993
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society, 1990
- ODMR detected via the electroluminescence in p+-i-n+a-Si:H cellsJournal of Physics C: Solid State Physics, 1984
- Spin-Dependent Recombination on Silicon SurfacePhysical Review B, 1972