Minority-carrier control gate turn-off thyristor
Authors:
- F. SugawaraFSF. Sugawara
- M. KimuraMKM. Kimura
- Y. SunoharaYSY. Sunohara
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (1) , 132-137
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Turn-off thyristor with a minority-carrier control gateIEEE Electron Device Letters, 1986
- Low-loss high-speed switching devices, 2300-V 150-A static induction thyristorIEEE Transactions on Electron Devices, 1985
- A novel gate—Cathode configuration with two interdigitation levels for GTO thyristorsIEEE Electron Device Letters, 1983
- Physical fundamentals and technical aspects of the lateral thyristorSolid-State Electronics, 1979