p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method
- 5 April 2021
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 129 (13) , 135702
Abstract
Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride. However, besides many theoretical predictions, at present, there are poor data on experimentally revealed p-type conductivity and evaluation of Zn activation energy by means of electrical transport measurements. In this paper, ammonothermal crystallization of bulk GaN:Zn monocrystals is reported. Despite a high doping level of Zn (up to 2 × 1020 cm−3), p-type conductivity with hole concentration as low as of 4 × 1015 cm−3 at room temperature and mobility about 3 cm2/V s was observed. A deep nature of the Zn acceptor was proved, as the ionization energy can exceed 260 meV. In addition, conduction in the impurity band appeared at temperatures as high as room temperature.Keywords
Funding Information
- Foundation For Polish Science (POIR.04.04.00-00-5CEB/17-00)
- Polish National Science Center (2018/29/B/ST5/00338)
- Polish National Science Center (2020/37/B/ST5/03746)
This publication has 30 references indexed in Scilit:
- Bulk ammonothermal GaNJournal of Crystal Growth, 2009
- Luminescence properties of defects in GaNJournal of Applied Physics, 2005
- First-principles studies of beryllium doping of GaNPhysical Review B, 2001
- Calculations of acceptor ionization energies in GaNPhysical Review B, 2001
- Heavy doping effects in Mg-doped GaNJournal of Applied Physics, 2000
- Acceptor binding energies in GaN and AlNPhysical Review B, 1998
- Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodesJournal of Crystal Growth, 1994
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- Photoluminescence of Zn-implanted GaNApplied Physics Letters, 1974
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969